HEXFET® power MOSFET utilize the latest processing techniques to achieve extremely low on-resistance per silicon area.
- Advanced process technology
- Dual N-channel MOSFET
- Ultra-low on-resistance
- 175°C operating temperature
- Repetitive avalanche allowed up to Tjmax
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
INFINEON |
| Part Number |
IRF7341GTRPBF |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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