Infineon IPW65R190C7XKSA1 IPW65R190C7XKSA1 Power Mosfet N Channel 650 V 24 A 0.404 ohm TO-247 Through Hole

The IPW65R190C7 is a 650V CoolMOS� C7 N-channel Power MOSFET features lower gate charge. This CoolMOS� is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS� C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

• Revolutionary best-in-class RDS (ON)
• Reduced energy stored in output capacitance (EOSS)
• Space saving through use of smaller packages or reduction of parts
• Improved safety margin and suitable for both SMPS and Solar Inverter applications
• Lowest conduction losses
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOSâ�¢ quality

Applications

Industrial, Power Management, Alternative Energy, Communications & Networking

Footnotes For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand	INFINEON
Part Number	IPW65R190C7XKSA1
Quantity	Each
Technical Data Sheet EN
Simulation Model EN

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