Infineon IPW65R070C6FKSA1 IPW65R070C6FKSA1 Power Mosfet N Channel 650 V 53.5 A 0.063 ohm TO-247 Through Hole

The IPW65R070C6 is a 650V CoolMOS� C6 N-channel Power MOSFET features lower gate charge. This CoolMOS� is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS� C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

• Easy control of switching behaviour
• Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
• Very high commutation ruggedness
• Easy to use
• Better light load efficiency
• Outstanding reliability with proven CoolMOSâ�¢ quality combined with high body diode ruggedness
• Better performance in comparison to previous CoolMOSâ�¢ generations
• More efficient, more compact, lighter and cooler
• Improved power density
• Improved reliability

• General purpose part can be used in both soft and hard switching topologies

Applications

Industrial, Power Management, Alternative Energy, Consumer Electronics, Communications & Networking, Automotive

Footnotes For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand	INFINEON
Part Number	IPW65R070C6FKSA1
Quantity	Each
Technical Data Sheet EN
Product Change Notice EN

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