Infineon IPP65R190C7FKSA1 Mosfet Transistor N Channel 13 A 650 V 0.168 ohm 10 3.5

The IPP65R190C7 is a 650V CoolMOSÖ C7 N-channel Power MOSFET features lower gate charge. This CoolMOSÖ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOSÖ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

• Revolutionary best-in-class RDS (ON)
• Reduced energy stored in output capacitance (EOSS)
• Space saving through use of smaller packages or reduction of parts
• Improved safety margin and suitable for both SMPS and Solar Inverter applications
• Lowest conduction losses
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOSÖ quality

Applications

Industrial, Power Management, Alternative Energy, Communications & Networking

Other details

Brand	INFINEON
Part Number	IPP65R190C7FKSA1
Quantity	Each
Technical Data Sheet EN
Simulation Model EN
Application Note EN

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All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.