Infineon IPL60R199CPAUMA1 IPL60R199CPAUMA1 Power Mosfet N Channel 650 V 16.4 A 0.18 ohm Vson Surface Mount

The IPL60R199CP is a 600V CoolMOS� CP N-channel Power MOSFET features ultra-low gate charge. This CoolMOS� CP offers device which provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. ThinPAK is a new leadless SMD package for HV MOSFET. The new package has a very small footprint of only 64mm² and a very low profile with only 1mm height. The significantly smaller package size, combined with benchmark low parasitic inductances, provides designers with a new and effective way to decrease system solution size in power-density driven designs.

• Low figure-of-merit(FOM) RON x Qg
• Extreme dV/dt rate
• Ultra low RDS (ON)
• Very low internal Rg
• High current capability
• Significant reduction of conduction and switching losses
• High power density and efficiency for superior power conversion systems
• Best-in-class performance ratio
• Very fast switching

Applications

Industrial, Power Management, Alternative Energy, Consumer Electronics, Communications & Networking

Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand	INFINEON
Part Number	IPL60R199CPAUMA1
Quantity
Technical Data Sheet EN
Application Note EN
Simulation Model EN

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