INFINEON IPD60R950C6ATMA1 Power MOSFET, N Channel, 650 V, 5.7 A, 0.95 ohm, TO-252 (DPAK), Surface Mount IPD60R950C6, SP001117730

The IPD60R750E6 is a 600V CoolMOS� E6 N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS� is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS� E6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

• Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
• Very high commutation ruggedness
• Easy to use
• Better light load efficiency
• Outstanding reliability with proven CoolMOS� quality combined with high body diode ruggedness
• Better performance in comparison to previous CoolMOS� generations
• More efficient, more compact, lighter and cooler
• Improved power density
• Improved reliability
• General purpose part can be used in both soft and hard switching topologies

Applications

Industrial, Power Management, Alternative Energy, Consumer Electronics, Communications & Networking, Automotive, Lighting

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Notes

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.