₹ 1587.1 includes GST and import duties. | |
B2B customers can avail ₹ 242.03 ITC on this product | |
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Description
Product Overview
IMCQ120R026M2HXTMA1 is a N-channel CoolSiC� 1200V SiC MOSFET G2, ideal for a wide range of applications such as solid-state circuit breakers and relays, EV charging stations, online and industrial UPS systems, string inverters, general-purpose drives (GPD), commercial air vehicles (CAV), and servo drives.
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 58A at TC = 100°C
- RDS(on) = 25.4mohm at VGS = 18V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time of 2µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
Product details
Other details
Brand | INFINEON |
Part Number | IMCQ120R026M2HXTMA1 |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN | ![]() |
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Bulk Discount
Quantity | Price |
2 | ₹ 1555.36 |
3-5 | ₹ 1539.49 |
5-10 | ₹ 1507.75 |
10+ | ₹ 1476.0 |
Bulk discount will be automatically applied during checkout based on quantity.