Infineon IKW30N60TFKSA1 IKW30N60TFKSA1 Igbt General Purpose 60 A 2.05 V 187 W 600 TO-247 3 Pins

The IKW30N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP� IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency
• Low conduction and switching losses

Applications

Power Management, Alternative Energy, Industrial

Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand	INFINEON
Part Number	IKW30N60TFKSA1
Quantity	Each
Technical Data Sheet EN
Application Note EN
Product Change Notice EN
Simulation Model EN

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.