| ₹ 586.78 includes GST and import duties. | |
| B2B customers can avail ₹ 89.48 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP� IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
- ±20V Gate to emitter voltage (VGE)
- 0.45K/W IGBT thermal resistance, junction to case
- 40K/W IGBT thermal resistance, junction - ambient
Power Management, Alternative Energy, Consumer Electronics, HVAC, Industrial
Other details
| Brand | INFINEON |
| Part Number | IGP50N60TXKSA1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Simulation Model EN | |
| Application Note EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
Bulk Discount
| Quantity | Price |
| 2 | ₹ 575.04 |
| 3-5 | ₹ 569.18 |
| 5-10 | ₹ 557.44 |
| 10+ | ₹ 545.71 |
Bulk discount will be automatically applied during checkout based on quantity.