| ₹ 507.84 includes GST and import duties. | |
| B2B customers can avail ₹ 77.45 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The IGP30N60H3 is a High Speed IGBT in Trench and field-stop technology. The high speed device is used to reduce the size of the active components (25 to 70kHz). Infineon's high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Power Management, Alternative Energy
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
| Brand | INFINEON |
| Part Number | IGP30N60H3XKSA1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 497.68 |
| 3-5 | ₹ 492.6 |
| 5-10 | ₹ 482.45 |
| 10+ | ₹ 472.29 |
Bulk discount will be automatically applied during checkout based on quantity.