![Infineon FF750R17ME7DB11BPSA1 Igbt Module Dual [Half Bridge] 750 A 1.7 V 20 mW 175 °C](http://www.tanotis.com/cdn/shop/products/b6f0378d8ad2b9a1580afc06bd1192c7_a5f8a13a-1eb9-45de-be4f-8f7adbd519d2_{width}x.jpg?v=1678395024)
![Infineon FF750R17ME7DB11BPSA1 Igbt Module Dual [Half Bridge] 750 A 1.7 V 20 mW 175 °C](http://www.tanotis.com/cdn/shop/products/b6f0378d8ad2b9a1580afc06bd1192c7_a5f8a13a-1eb9-45de-be4f-8f7adbd519d2_1024x.jpg?v=1678395024)
| ₹ 35128.84 includes GST and import duties. | |
| B2B customers can avail ₹ 5357.15 ITC on this product | |
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Description
This is a FF750R17ME7DB11BPSA1 IGBT Module , Dual [Half Bridge], 750 A, 1.7 V, 20 mW, 175 °C, Module product from INFINEON with the model number FF750R17ME7DB11BPSA1
Product details
| IGBT Configuration | Dual [Half Bridge] |
| Continuous Collector Current | 750A |
| Collector Emitter Saturation Voltage | 1.7V |
| Power Dissipation | 20mW |
| Operating Temperature Max | 175°C |
| Transistor Case Style | Module |
| IGBT Termination | Press Fit |
| Collector Emitter Voltage Max | 1.7kV |
| IGBT Technology | IGBT 7 [Trench/Field Stop] |
| Transistor Mounting | Panel |
| Product Range | - |
Other details
| Brand | INFINEON |
| Part Number | FF750R17ME7DB11BPSA1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Enhanced Product Overview EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 34426.26 |
| 3-5 | ₹ 34074.97 |
| 5-10 | ₹ 33372.4 |
| 10+ | ₹ 32669.82 |
Bulk discount will be automatically applied during checkout based on quantity.