CY15V116QSN-108BKXI is an EXCELON� ultra ferroelectric non-volatile RAM (F-RAM). A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, this performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. It is capable of supporting 10^15 read/write cycles or 1000 million times more write cycles than EEPROM.
- Voltage range from 1.71V to 1.89V (1.8V typical), 16Mbit density
- No inrush current control, 108MHz, 24-ball FBGA package type
- Industrial temperature range from -40°C to +85°C
- 16Mb ferroelectric random access memory (F-RAM) logically organized as 2048K � 8
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
- Single and multi I/O serial peripheral interface (SPI)
- Serial bus interface SPI protocols, extended I/O SPI protocols
- Dual SPI (DPI) protocols, quad SPI (QPI) protocols
- eXecute-in-place (XIP) for memory read/write, software block protection
Other details
| Brand |
INFINEON |
| Part Number |
CY15V116QSN-108BKXI |
| Quantity |
Each |
| Technical Data Sheet EN |
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