INFINEON CY15B104QSN-108SXI Ferroelectric RAM, 4 Mbit, QSPI, 108 MHz, 1.8 V to 3.6 V Supply, SOIC-8 SP005647997, CY15B104QSN-108SXI

CY15B104QSN-108SXI is a CY15B104QSN EXCELON� Ultra high-performance, 4Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other non-volatile memories. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. It also supports the cyclic redundancy check (CRC) feature which can be used to check the data integrity of the stored data in the memory array.

• Virtually unlimited endurance of 100 trillion (10^14) read/write cycles, 151-year data retention
• Infineon instant non-volatile write technology, advanced high-reliability ferroelectric process
• Single and multi I/O serial peripheral interface (SPI), serial bus interface SPI protocols
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers
• SPI clock frequency, execute-in-place (XIP) for memory read/write
• Write protection, data security, and data integrity, software block protection
• Hardware protection using the write protect active-low (WP) pin, 1.8V to 3.6V low voltage operation
• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity
• 8-pin SOIC (EIAJ) package, no inrush current control
• Industrial temperature range from (-40°C to + 85°C)