INFINEON CY15B102QN-50SXI Ferroelectric RAM, 2 Mbit, SPI, 50 MHz, 1.8 V to 3.6 V Supply, SOIC-8 SP005647925, CY15B102QN-50SXI

CY15B102QN-50SXI is a CY15B102QN 2Mb, low power, EXCELON� LP Ferroelectric RAM (F-RAM) employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. It performs write operations at bus speed. No write delays are incurred. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. It is ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

• 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8
• Infineon instant non-volatile write technology, advanced high-reliability ferroelectric process
• Fast SPI, up to 50MHz frequency, supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme, hardware protection using the write protect active-low WP pin
• Software protection using write disable (WRDI) instruction
• Dedicated 256byte special sector F-RAM, dedicated special sector write and read
• Stored content can survive up to three standard reflow soldering cycles
• Low-power consumption, 2.4mA (typ) active current at 40MHz
• 8-pin SOIC (EIAJ) package
• Industrial (-40°C to +85°C) temperature range