INFINEON CY14B116N-ZSP25XI Non-volatile SRAM, 16 Mbit, 1M x 16bit, 25 ns Read/Write, Parallel, 2.7 V to 3.6 V, TSOP-II-54 SP005643927, CY14B116N-ZSP25XI

CY14B116N-ZSP25XI is a CY14B116N fast SRAM, with a non-volatile element in each memory cell. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world�s most reliable non-volatile memory. The SRAM can be read and written an infinite number of times. The non-volatile data residing in the non-volatile elements do not change when data is written to the SRAM. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory.

• 16Mbit non-volatile static random access memory (nvSRAM)
• Hands-off automatic STORE on power-down with only a small capacitor
• STORE to QuantumTrap non-volatile elements is initiated by software
• RECALL to SRAM initiated by software or power-up, high reliability
• Infinite read, write, and RECALL cycles, 1 million STORE cycles to QuantumTrap
• Sleep mode operation, low power consumption, active current of 75mA at 45ns
• Industrial temperature range from �40°C to +85°C
• 25ns speed, 54-pin TSOP II speed
• 3V voltage rating, ×16 data bus