₹ 190.88 includes GST and import duties. | |
B2B customers can avail ₹ 29.11 ITC on this product | |
100% Secure Payments | 100% Genuine product |
Description
The BSZ900N15NS3 G is an OptiMOS� N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS� part.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg�and Qgd
- Excellent gate charge x RDS (ON)�product (FOM)
- MSL1 rated 2
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
Product details
Power Dissipation Pd | 38W |
Operating Temperature Max | 150�C |
Continuous Drain Current Id | 13A |
Transistor Polarity | N Channel |
No. of Pins | 8Pins |
Threshold Voltage Vgs | 3V |
Product Range | - |
Automotive Qualification Standard | - |
Drain Source Voltage Vds | 150V |
Rds(on) Test Voltage Vgs | 10V |
Transistor Case Style | TSDSON |
On Resistance Rds(on) | 0.074ohm |
MSL | MSL 3 - 168 hours |
Other details
Brand | INFINEON |
Part Number | BSZ900N15NS3GATMA1 |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
Bulk Discount
Quantity | Price |
2 | ₹ 187.06 |
3-5 | ₹ 185.15 |
5-10 | ₹ 181.34 |
10+ | ₹ 177.52 |
Bulk discount will be automatically applied during checkout based on quantity.