6ED2231S12T is a 1200V three-phase gate driver for IGBT/SiC with an integrated bootstrap diode and OCP. It has a high voltage, high-speed power IGBT or SiC MOSFET gate driver with three independent high side and low side referenced output channels for three-phase applications. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or TTL outputs, down to 3.3V logic. An over�current protection (OCP) function which terminates all six outputs can also be derived from this resistor. An open drain FAULT signal is provided to indicate that an over-current or under-voltage shutdown has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network. Typical application includes industrial drives, embedded inverters for motor control in pumps, fans, and commercial air conditioning.
- <=1200V VS-OFFSET, VCC range from 13V to 20V, +0.35A / -0.65A typical IO+ / IO-
- 700ns/ 650ns typical tON / tOFF, 460ns typical deadtime
- Optimized for IGBT (insulated gate bipolar transistor) / SiC (Silicon carbide) MOSFET
- Integrated ultra�fast bootstrap diode, floating channel designed for bootstrap operation
- Output source/sink current capability +0.35A/�0.65A
- Tolerant to negative transient voltage up to -100V (Pulse width is up 700ns) given by SOI-technology
- Undervoltage lockout for both channels, over current protection with ±5% ITRIP threshold
- Fault reporting, automatic fault clear and enable function on the same pin
- Matched propagation delay for all channels, integrated 460ns deadtime protection
- DSO-24 package, ambient temperature rating range from -40 to 125°C
Other details
| Brand |
INFINEON |
| Part Number |
6ED2231S12TXUMA1 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
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