1EDN7146UXTSA1 is a 1EDN71x6U EiceDRIVER� 200V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs. This single-channel gate-driver IC optimized for driving Infineon CoolGaN� Schottky Gate HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with GaN SG HEMTs, including truly differential Input, four driving strength options, an active Miller clamp, and a bootstrap voltage clamp. Potential applications includes single channel synchronous rectifier, class-E resonant wireless power, half-bridge (2 x 1EDN71x6U) DC-DC converter, BLDC/PMSM motor drive, class-D audio amplifier, class-D resonant wireless power.
- Optimized for driving GaN SG HEMTs and Si MOSFETs
- High immunity to common-mode voltage transitions for robust operation during fast switching
- High common-mode input voltage range up to ±200V for high side operation
- Compatible with 3.3V or 5V input logic
- Active bootstrap clamp to avoid bootstrap capacitor overcharging during dead-time
- Active miller clamp with 5A sink capability to avoid induced turn-on
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- PG-TSNP-7-11 package type
- Junction temperature range from -40 to 150°C
Other details
| Brand |
INFINEON |
| Part Number |
1EDN7146UXTSA1 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
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