1EDN7126UXTSA1 is a high-side TDI single-channel gate driver IC for driving Infineon CoolGaN� Schottky Gate HEMTs and other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with GaN SG HEMTs, including truly differential Input, four driving strength options, active Miller clamp, and bootstrap voltage clamp. Potential applications includes single channel: synchronous rectifier, class-E resonant wireless power, half-bridge (2 x 1EDN71x6U): DC-DC converter, BLDC/PMSM motor drive, class-D audio amplifier, class-D resonant wireless power.
- PG-TSNP-7-11 package type, junction temperature range from -40 to 150°C
- Optimized for driving GaN SG HEMTs and Si MOSFETs
- Fully differential logic input circuitry to avoid false triggering in low-side/high-side operation
- High common-mode input voltage range (CMR) up to ±200V for high side operation
- High immunity to common-mode voltage transitions for robust operation during fast switching
- Compatible with 3.3V or 5V input logic
- Active bootstrap clamp to avoid bootstrap capacitor overcharging during dead-time
- Active miller clamp with 5A sink capability to avoid induced turn-on
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Other details
| Brand |
INFINEON |
| Part Number |
1EDN7126UXTSA1 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
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