Product details
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Transistor Case Style
PowerPAIR
Power Dissipation N Channel
16.7W
Operating Temperature Max
150°C
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
30A
Drain Source On State Resistance N Channel
0.0084ohm
Power Dissipation P Channel
-
Product Range
TrenchFET Gen IV Series
Other details
| Brand |
VISHAY |
| Part Number |
SIZ346DT-T1-GE3 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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