Product details
Technical Specifications
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
Power Dissipation P Channel
-
Product Range
TrenchFET Gen V Series
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
118A
Drain Source On State Resistance N Channel
0.0031ohm
Transistor Case Style
PowerPAK 1212-SCD
Power Dissipation N Channel
69.4W
Operating Temperature Max
150°C
Other details
| Brand |
VISHAY |
| Part Number |
SISF54DN-T1-GE3 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.