| ₹ 261.63 includes GST and import duties. | |
| B2B customers can avail ₹ 39.9 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
SIR106DP-T1-RE3 is a N-Channel 100 V (D-S) MOSFET. Application includes synchronous rectification, primary side switch, DC/DC converters, OR-ing, power supplies, motor drive control, battery and load switch.
- TrenchFET® Gen IV power MOSFET
- Very low RDS - Qg figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100 % Rg and UIS tested
- 100V minimum drain-source breakdown voltage (VGS = 0V, ID = 250?A)
- 0.0080 ohm maximum drain-source on-state resistance (VGS =10V, ID = 15A)
- 0.0090 ohm maximum drain-source on-state resistance (VGS = 7.5V, ID = 10A)
- 32nC typical total gate charge (VDS = 50V, VGS = 7.5V, ID = 15A)
- 65.8A maximum continuous source-drain diode current (TC = 25°C)
- PowerPAK SO-8 package, operating junction and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Other details
| Brand | VISHAY |
| Part Number | SIR106DP-T1-RE3 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 256.4 |
| 3-5 | ₹ 253.78 |
| 5-10 | ₹ 248.55 |
| 10+ | ₹ 243.32 |
Bulk discount will be automatically applied during checkout based on quantity.