| ₹ 1611.07 includes GST and import duties. | |
| B2B customers can avail ₹ 245.69 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
This is a TW083N65C,S1F(S Silicon Carbide MOSFET , Single, N Channel, 30 A, 650 V, 0.113 ohm, TO-247 product from TOSHIBA with the model number TW083N65C,S1F(S
Product details
| MOSFET Module Configuration | Single |
| Channel Type | N Channel |
| Continuous Drain Current Id | 30A |
| Drain Source Voltage Vds | 650V |
| Drain Source On State Resistance | 0.113ohm |
| Transistor Case Style | TO-247 |
| No. of Pins | 3Pins |
| Rds(on) Test Voltage | 18V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 111W |
| Operating Temperature Max | 175°C |
| Product Range | - |
Other details
| Brand | TOSHIBA |
| Part Number | TW083N65C,S1F(S |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 1578.85 |
| 3-5 | ₹ 1562.74 |
| 5-10 | ₹ 1530.52 |
| 10+ | ₹ 1498.3 |
Bulk discount will be automatically applied during checkout based on quantity.