Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
100V
|
| Continuous Drain Current Id:
148A
|
| Drain Source On State Resistance:
0.004ohm
|
| Transistor Case Style:
TO-220
|
| Transistor Mounting:
Through Hole
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
4V
|
| Power Dissipation:
192W
|
| No. of Pins:
3Pins
|
| Operating Temperature Max:
150°C
|
| Product Range:
U-MOSVIII-H Series
|
| Qualification:
-
|
Other details
| Brand |
TOSHIBA |
| Part Number |
TK65E10N1,S1X(S |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
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