| ₹ 443.12 includes GST and import duties. | |
| B2B customers can avail ₹ 67.58 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh� technology, which associates the multiple drain process with the PowerMESH� horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% Avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications
Industrial
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 550V |
| Continuous Drain Current Id: 12A |
| Drain Source On State Resistance: 0.35ohm |
| Transistor Case Style: TO-220 |
| Transistor Mounting: Through Hole |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 4V |
| Power Dissipation: 160W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: STP |
| Qualification: - |
| MSL: - |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | STP12NM50 |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 434.26 |
| 3-5 | ₹ 429.83 |
| 5-10 | ₹ 420.96 |
| 10+ | ₹ 412.1 |
Bulk discount will be automatically applied during checkout based on quantity.