| ₹ 35203.74 includes GST and import duties. | |
| B2B customers can avail ₹ 5368.57 ITC on this product | |
| 100% Secure Payments | 100% Genuine product | |
| The product is eligible for Free Shipping |
Description
This is a GD650HFX170P1S IGBT Module , Half Bridge, 1.073 kA, 1.9 V, 4.2 kW, 150 °C, Module product from STARPOWER with the model number GD650HFX170P1S
Product details
| IGBT Configuration | Half Bridge |
| DC Collector Current | 1.073kA |
| Collector Emitter Saturation Voltage Vce(on) | 1.9V |
| Power Dissipation Pd | 4.2kW |
| Junction Temperature Tj Max | 150°C |
| Transistor Case Style | Module |
| IGBT Termination | Stud |
| Collector Emitter Voltage V(br)ceo | 1.7kV |
| IGBT Technology | Trench Field Stop |
| Product Range | - |
Other details
| Brand | STARPOWER |
| Part Number | GD650HFX170P1S |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 34499.67 |
| 3-5 | ₹ 34147.63 |
| 5-10 | ₹ 33443.55 |
| 10+ | ₹ 32739.48 |
Bulk discount will be automatically applied during checkout based on quantity.