The SKM200GB125D is a SEMITRANS® 3 ultrafast IGBT Module for use with inductive heating and resonant inverters up to 100kHz. It features isolated copper base plate using DCB (Direct Copper Bonding) technology and short tail current with low temperature dependence.
- Half-bridge switch
- N channel, homogeneous Si
- Low inductance case
- High short-circuit capability, self limiting to 6 x IC
- Fast and soft inverse CAL diodes
- Large clearance (13mm) and creepage distance (20mm)
Product details
| IGBT Configuration:
Half Bridge
|
| Continuous Collector Current:
200A
|
| Collector Emitter Saturation Voltage:
3.3V
|
| Power Dissipation:
-
|
| Operating Temperature Max:
150°C
|
| Transistor Case Style:
Module
|
| IGBT Termination:
Stud
|
| Collector Emitter Voltage Max:
1.2kV
|
| IGBT Technology:
NPT IGBT [Ultrafast]
|
| Transistor Mounting:
Panel
|
| Product Range:
-
|
Other details
| Brand |
SEMIKRON |
| Part Number |
SKM200GB125D |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
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