Product details
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
338A
Drain Source On State Resistance
0.0055ohm
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
150°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Power Dissipation
1.098kW
Other details
Brand |
ONSEMI |
Part Number |
NXH004P120M3F2PTNG |
Quantity |
Each |
Technical Data Sheet EN |
 |
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