| ₹ 239.77 includes GST and import duties. | |
| B2B customers can avail ₹ 36.56 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
NVMFD5C680NLT1G is a dual N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is 60V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Negative threshold temperature coefficient is -4.3mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 23mohm typical at (VGS = 10V, ID = 5A)
- Input capacitance is 350pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Gate-to-drain charge is 0.8nC typical at (VGS = 4.5V, VDS = 48V; ID = 10A)
- Turn-on delay time is 6.4ns typical at (VGS = 4.5V, VDS = 48V, ID = 10A, RG = 1ohm)
- Rise time is 25ns typical at (VGS = 4.5V, VDS = 48V, ID = 10A, RG = 1ohm)
- Junction temperature range from -55°C to +175°C, DFN8 package
Product details
Other details
| Brand | ONSEMI |
| Part Number | NVMFD5C680NLT1G |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 234.97 |
| 3-5 | ₹ 232.58 |
| 5-10 | ₹ 227.78 |
| 10+ | ₹ 222.99 |
Bulk discount will be automatically applied during checkout based on quantity.