| ₹ 466.94 includes GST and import duties. | |
| B2B customers can avail ₹ 71.21 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
NVD5117PLT4G-VF01 is a single, P-channel, power MOSFET.
- Low RDS(on) to minimize conduction losses
- High current capability, avalanche energy specified
- AEC-Q101 qualified
- Continuous drain current is -61A at (TC = 25°C)
- Drain-to-source breakdown voltage is -60V minimum at (VGS = 0V, ID = -250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Drain-to-source on resistance is 12mohm typical at (VGS = -10V, ID = -29A)
- Turn-on delay time is 22ns typical at (VGS = -4.5V, VDS = -48V, ID = -29A, RG = 2.5 ohm)
- Rise time is 195ns typical at (VGS = -4.5V, VDS = -48V, ID = -29A, RG = 2.5 ohm)
- Junction temperature range from -55°C to 175°C, DPAK package
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Other details
| Brand | ONSEMI |
| Part Number | NVD5117PLT4G-VF01 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 457.6 |
| 3-5 | ₹ 452.93 |
| 5-10 | ₹ 443.59 |
| 10+ | ₹ 434.25 |
Bulk discount will be automatically applied during checkout based on quantity.