ONSEMI NCV57100DWR2G Gate Driver, 1 Channels, Isolated, IGBT, MOSFET, SiC MOSFET, 16 Pins, WSOIC

NCV57100DWR2G is a high current single channel IGBT / SiC / MOSFET driver with internal galvanic isolation. It is designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and READY outputs, active MILLER CLAMP, accurate UVLOs, DESAT protection and DESAT diagnostic function, soft turn off at DESAT, disable output function and separate high and low (OUTH and OUTL) driver outputs (NCx57100) for system design convenience. The device accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. It provides > 5KVrms (UL1577 rating) galvanic isolation and > 1424 VPK (working voltage) capabilities. Applications include automotive applications, solar inverters, industrial power supplies, motor control, welding, uninterruptible power supplies (UPS).

• Low output impedance for enhanced power switch driving
• Short propagation delays with accurate matching
• Active miller clamp to prevent spurious gate turn?on
• DESAT protection with programmable delay, DESAT diagnostic function (DSCHK)
• Output disable function, negative voltage (down to -8V) capability for DESAT
• Soft turn off during power switch short circuit, gate clamping during short circuit
• Tight UVLO thresholds for bias flexibility, wide bias voltage range including negative VEE2
• 3.3V to 5V input supply voltage, designed for AEC?Q100 certification
• High transient immunity, high electromagnetic immunity
• Ambient temperature range from -40 to 125°C, SOIC?16 wide body package