MGD3160AM335EK is a GD3160 series advanced single-channel gate driver designed to drive the latest SiC and IGBT modules for xEV traction inverters, OBC and DC-DC converters. This offers integrated galvanic isolation, a programmable interface via SPI, and advanced programmable protection features, such as overtemperature, desaturation and current sense protection. It is capably drives SiC MOSFETs and IGBT gates directly: its high gate current and programmable gate drive voltage features provide high performance switching, low dynamic on-resistance, and rail-to-rail gate voltage control. Safety and regulatory approvals are Reinforced isolation per DIN V VDE V 0884-10, withstand 5000V rms (1 minute) isolation per UL 1577, CSA component acceptance notice 5A, AEC-Q100 grade 1 automotive qualified.
- Integrated galvanic signal isolation, high gate current integrated: 15A source/sink capable
- SPI interface for safety monitoring, configuration, and diagnostic reporting
- Supports high switching frequencies: PWM up to 100kHz, VGE real time cycle-by-cycle monitoring
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Programmable gate voltage regulator over an expanded range, deadtime enforcement
- Temperature sense compatible with NTC and PTC thermistors
- Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
- Integrated ADC for monitoring parameters from HV domain, CMTI > 100V/ns
- Operating temperature range from -40°C to 125°C, small package footprint (8mm x 13mm) 32pin SOIC
- Built-in self-check of all analogue and digital circuits
Other details
| Brand |
NXP |
| Part Number |
MGD3160AM335EK |
| Quantity |
Each |
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