MT29F4G08ABADAH4 is a NAND flash memory. NAND flash device include an asynchronous data interface for high-performance I/O operations. This device use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN).
- Single-level cell (SLC) technology, asynchronous I/O performance
- Array performance, erase block is 700µs (typical), command set is ONFI NAND flash protocol
- Advanced command set, one-time programmable (OTP) mode
- Interleaved die (LUN) operations, read unique ID, internal data move
- Operation status byte provides software method for detecting, operation completion
- Pass/fail condition, write-protect status, quality and reliability
- Internal data move operations supported within the plane from which data is read
- 4Gb density, 8bit device width, SLC level
- 3.3V (2.7-3.6V) operating voltage, asynchronous interface
- 63-ball VFBGA (9 x 11 x 1.0mm) package, commercial operating temperature range from 0°C to 70°C
Other details
| Brand |
MICRON |
| Part Number |
MT29F4G08ABADAH4D |
| Quantity |
Each |
| Technical Data Sheet EN |
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