| ₹ 186.92 includes GST and import duties. | |
| B2B customers can avail ₹ 28.51 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
- Low threshold (2.0V max.)
- High input impedance
- Low input capacitance (125pF max.)
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
Applications
Electronics Design, Commercial, Consumer Electronics, Low Voltage
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 100V |
| Continuous Drain Current Id: 730mA |
| Drain Source On State Resistance: 1ohm |
| Transistor Case Style: SOT-89 |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 2V |
| Power Dissipation: 1.6W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: - |
Other details
| Brand | MICROCHIP |
| Part Number | TN2510N8-G |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 183.18 |
| 3-5 | ₹ 181.31 |
| 5-10 | ₹ 177.57 |
| 10+ | ₹ 173.84 |
Bulk discount will be automatically applied during checkout based on quantity.