| ₹ 70.35 includes GST and import duties. | |
| B2B customers can avail ₹ 10.73 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The LND150K1-G is a N-channel depletion-mode DMOS FET utilizing Supertex's lateral DMOS technology. The gate is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
Applications
Power Management, Industrial
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 500V |
| Continuous Drain Current Id: 13mA |
| Drain Source On State Resistance: 850ohm |
| Transistor Case Style: TO-236AB |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 0V |
| Gate Source Threshold Voltage Max: - |
| Power Dissipation: 360mW |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | MICROCHIP |
| Part Number | LND150K1-G |
| Quantity | |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 68.94 |
| 3-5 | ₹ 68.24 |
| 5-10 | ₹ 66.83 |
| 10+ | ₹ 65.43 |
Bulk discount will be automatically applied during checkout based on quantity.