INFINEON S29GL512T11FHIV10 Flash Memory, Parallel NOR, 512 Mbit, 64M x 8bit, Parallel, 110ns, FBGA-64

S29GL512T11FHIV10 is a S29GL512T MIRRORBIT� page-mode flash memory IC fabricated on 45nm process technology. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today�s embedded applications that require higher density, better performance, and lower power consumption.

• Single supply (VCC) for read/program/erase 2.7V to 3.6V, wide I/O voltage range (VIO): 1.65V to VCC
• ×8/×16 data bus, asynchronous 32byte page read, 512byte programming buffer
• Programming in page multiples, up to a maximum of 512 bytes
• Automatic error checking and correction ECC-internal hardware ECC with single bit error correction
• Suspend and Resume commands for program and erase operations, uniform 128KB sectors
• Status register, data polling, and ready/busy pin methods to determine device status
• Advanced sector protection (ASP), volatile and non-volatile protection methods for each sector
• Separate 2048byte one-time program (OTP) array, four lockable regions (SSR0�SSR3)
• 110 ns random access time, fortified ball-grid array package (LAA064)
• VIO=1.65 to VCC, VCC=2.7V to 3.6V, industrial �40 to 85°C temperature