| ₹ 1218.83 includes GST and import duties. | |
| B2B customers can avail ₹ 185.87 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
S29GL512S10FHI010 is a S29GL512 MIRRORBIT� eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today�s embedded applications that require higher density, better performance and lower power consumption.
- 100ns random access time speed option, industrial temperature range from -40 to +85°C
- Fortified ball-grid array package (LAA064) 13 x 11mm package type
- VIO = VCC = 2.7V to 3.6V, highest address sector protected
- CMOS 3.0V core with versatile I/O, versatile I/O feature, wide I/O voltage range 1.65V to VCC
- ×16 data bus, asynchronous 32byte page read
- Programming in page multiples, up to a maximum of 512bytes
- Automatic error checking and correction internal hardware ECC with single bit error correction
- Sector erase, uniform 128kbyte sectors
- Suspend and resume commands for program and erase operations
- 100000 program / erase cycles, 20 years data retention
Product details
Other details
| Brand | INFINEON |
| Part Number | S29GL512S10FHI010 |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 1194.45 |
| 3-5 | ₹ 1182.27 |
| 5-10 | ₹ 1157.89 |
| 10+ | ₹ 1133.51 |
Bulk discount will be automatically applied during checkout based on quantity.