INFINEON S29GL256S90FHI010 Flash Memory, Parallel NOR, 256 Mbit, 32M x 8bit, Parallel, 90ns, FBGA-64

S29GL256S90FHI010 is a S29GL256 MIRRORBIT� Eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today�s embedded applications requiring higher density, better performance, and lower power consumption.

• 90ns random access time speed option, industrial temperature range from -40°C to 85°C
• Fortified ball-grid array (LAA064) 13 x 11mm package type
• VIO = VCC is 2.7V to 3.6V, highest address sector protected
• ×16 data bus, asynchronous 32byte page read
• 512byte programming buffer, programming in page multiples, up to a maximum of 512bytes
• Single word and multiple program on same word options
• Automatic error checking and correction internal hardware ECC with single bit error correction
• Separate 1024byte one time program (OTP) array with two lockable regions
• Volatile and non-volatile protection methods for each sector
• 100000 program / erase cycles, 20 years data retention