| ₹ 3106.37 includes GST and import duties. | |
| B2B customers can avail ₹ 473.72 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
IMBG65R007M2HXTMA1 is a CoolSiC MOSFET in a 7 pin TO-263 package. Built on Infineon�s robust 2nd generation Silicon Carbide trench technology, the 650V CoolSiC� MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfil the ever-growing system and market needs. Typical applications include SMPS, solar PV inverters, energy storage and battery formation, UPS, EV charging infrastructure and motor drives.
- Ultra-low switching losses
- Benchmark gate threshold voltage VGS(th) = 4.5V
- Robust against parasitic turn-on even with 0V turn-off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- Enables high efficiency and high power density designs
- Facilitates great ease of use and integration
Product details
Other details
| Brand | INFINEON |
| Part Number | IMBG65R007M2HXTMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 3044.24 |
| 3-5 | ₹ 3013.18 |
| 5-10 | ₹ 2951.05 |
| 10+ | ₹ 2888.92 |
Bulk discount will be automatically applied during checkout based on quantity.