Infineon IKW50N60H3FKSA1 Igbt 100 A 1.85 V 333 W 600 TO-247 3 Pins

The IKW50N60H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.

• Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
• Short-circuit capability
• Excellent performance
• Low switching and conduction losses
• Very good EMI behaviour
• Small gate resistor for reduced delay time and voltage overshoot
• Best-in-class IGBT efficiency and EMI behaviour
• Packaged with and without freewheeling diode for increased design freedom
• Green product
• Halogen-free

Applications

Alternative Energy, Power Management

Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand	INFINEON
Part Number	IKW50N60H3FKSA1
Quantity	Each
Technical Data Sheet EN
Simulation Model EN
Application Note EN

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