INFINEON IKW20N60H3FKSA1 IGBT, 20 A, 2.4 V, 170 W, 600 V, TO-247, 3 Pins IKW20N60H3 , SP000702556

The IKW20N60H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.

• Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5?) whilst maintaining excellent switching behaviour
• Short-circuit capability
• Excellent performance
• Low switching and conduction losses
• Very good EMI behaviour
• Small gate resistor for reduced delay time and voltage overshoot
• Best-in-class IGBT efficiency and EMI behaviour
• Packaged with and without freewheeling diode for increased design freedom
• Green product
• Halogen-free

Applications

Power Management, Alternative Energy

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.