INFINEON FM28V100-TGTR Ferroelectric RAM, 1 Mbit, Parallel, 2 V to 3.6 V Supply, TSOP-I-32 SP005659719, FM28V100-TGTR

FM28V100-TGTR is a FM28V100 a 128K × 8 non-volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by chip enable or simply by changing the address. The F-RAM memory is non-volatile due to its unique ferroelectric memory process. These features make the FM28V100 ideal for non-volatile memory applications requiring frequent or rapid writes.

• 1Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8
• NoDelay� writes, page mode operation to 30ns cycle time
• Advanced high-reliability ferroelectric process, SRAM compatible
• No battery concerns, monolithic reliability, true surface mount solution, no rework steps
• Superior for moisture, shock, and vibration, low power consumption
• Active current 7mA (typ), low-voltage operation: VDD = 2.0V to 3.6V
• Industrial temperature range from �40°C to +85°C
• High-endurance 100 trillion (10^14) read/writes
• 32-pin TSOP I package