INFINEON CY62136FV30LL-45ZSXI SRAM, 2 Mbit, 128K x 16bit, 2.2 V to 3.6 V, TSOP-II-44 SP005641873, CY62136FV30LL-45ZSXI

CY62136FV30LL-45ZSXI is a CY62136FV30 MoBL® 2Mbit (128 K × 16) static RAM. This high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life� (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (active-low CE HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), both Byte High Enable and Byte Low Enable are disabled active-low (active-low BHE, active-low BLE HIGH) or during a write operation (active-low CE LOW and active-low WE LOW).

• Very high speed: 45ns
• Pin compatible with CY62136V, CY62136CV30/CV33, and CY62136EV30
• Ultra low standby power, typical standby current: 1?A
• Ultra low active power, typical active current: 1.6mA at f = 1MHz
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 44-pin TSOP II package
• 2Mbit density, × 16 bus width
• 3V typical voltage range
• Industrial ambient temperature range �40°C to +85°C