INFINEON CY15V104QSN-108SXI Ferroelectric RAM, 4 Mbit, QSPI, 108 MHz, 1.71 V to 1.89 V Supply, SOIC-8 SP005638405, CY15V104QSN-108SXI

CY15V104QSN-108SXI is a 4Mb EXCELON� ultra ferroelectric RAM (F-RAM). This is a high-performance, 4Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other non-volatile memories. Unlike serial flash, the CY15x104QSN performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. The CY15x104QSN is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.

• 8-pin SOIC (EIAJ) package type, 1. 71V to 1. 89V (1. 8V typical ) voltage
• 4Mbit density, quad SPI F-RAM interface, no inrush current control
• 108MHz frequency, 8-pin SOIC (EIAJ) package type
• Industrial temperature range from -40°C to + 85°C
• 4Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8
• Infineon instant non-volatile write technology, advanced high-reliability ferroelectric process
• Single and multi I/O serial peripheral interface, serial bus interface SPI protocols
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers
• Supports SPI mode 0 (0, 0) for all DDR mode transfers, software block protection