INFINEON CY15B128Q-SXE Ferroelectric RAM, 128 Kbit, SPI, 33 MHz, 2.7 V to 3.6 V Supply, SOIC-8 SP005650493, CY15B128Q-SXE

CY15B128Q-SXE is a CY15B128Q is a 128Kbit non-volatile memory employing an advanced ferroelectric process. An F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. It provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. This uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.

• 128Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8
• NoDelay� writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 33MHz frequency
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0, 0), mode 3 (1, 1)
• Sophisticated write-protection scheme, hardware protection using the write protect active-low WP pin
• Low power consumption, 5mA active current at 33MHz
• AEC Q100 grade 1 compliant
• Low-voltage operation: VDD = 2.7V to 3.6V
• Automotive-E temperature range from �40°C to +125°C