INFINEON 1EDI303XASEVALBOARDTOBO1 Evaluation Board, 1EDI3030AS, 1EDI3031AS, 1EDI3033AS, SiC MOSFET Gate Driver SP005562681

1EDI303XASEVALBOARDTOBO1 is a EiceDRIVER� 1EDI303xAS evaluation board. The eval board has been designed to ease the performance evaluation of EiceDRIVER� 1EDI303xAS which is suitable for SiC based applications. The EiceDRIVER� gate driver 1EDI302xAS/1EDI303xAS is a high voltage IGBT/SiC-MOSFET driver for automotive motor drives with a power above 5KW. The device is based on Infineon's Coreless Transformer (CT) technology, providing galvanic insulation between the low voltage domain and high voltage domain. The device supports 400V, 600V and 1200V IGBT/SiC-MOSFET technologies. The primary logic of the device supports 5V and 3.3V. The high voltage domain (secondary side) can drive IGBT/Sic power switches directly or an external booster stage. Short propagation delay and controlled internal tolerances lead to minimal distortion of the PWM signal. Suitable for main inverter, DCDC, OBC, powertrain inverter for CAV, industrial drives applications.

• Easy product performance evaluation to shorten development schedules and accelerate your TOM
• Seamless product evaluation and strong design support via online simulation and eval boards
• Single channel isolated IGBT/SiC-MOSFET driver
• For IGBT/SiC-MOSFET power switches up to 1200V
• 11.5A peak current rail-to-rail output
• DESAT protection, active miller clamp
• ASC pin for PMSM motor drive application
• Coreless transformer isolated driver and basic insulation recognized under UL 1577
• Integrated protection features
• Developed according to ISO 26262