| ₹ 154.6 includes GST and import duties. | |
| B2B customers can avail ₹ 23.58 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Good hFE linearity
- High fT frequency
- Well-controlled hFE parameter for increased reliability
Applications
Industrial
Product details
| Transistor Polarity | NPN |
| Power Dissipation Pd | 40W |
| RF Transistor Case | SOT-32 |
| DC Current Gain hFE | 750hFE |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Collector Emitter Voltage V(br)ceo | 80V |
| DC Collector Current | 4A |
| No. of Pins | 3Pins |
| Transistor Mounting | Through Hole |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | BD679 |
| Quantity | Each |
| Product Change Notice (119.25KB) EN | View or download |
| Technical Data Sheet (377.20KB) EN | View or download |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 151.51 |
| 3-5 | ₹ 149.96 |
| 5-10 | ₹ 146.87 |
| 10+ | ₹ 143.78 |
Bulk discount will be automatically applied during checkout based on quantity.