| ₹ 11694.24 includes GST and import duties. | |
| B2B customers can avail ₹ 1783.37 ITC on this product | |
| 100% Secure Payments | 100% Genuine product | |
| The product is eligible for Free Shipping |
Description
This is a FF200R12KT4HOSA1 IGBT Array & Module Transistor , Dual NPN, 320 A, 1.75 V, 1.1 kW, 1.2 kV, Module product from INFINEON with the model number FF200R12KT4HOSA1
Product details
| Transistor Polarity | Dual NPN |
| DC Collector Current | 320A |
| Collector Emitter Saturation Voltage Vce(on) | 1.75V |
| Power Dissipation Pd | 1.1kW |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | Module |
| No. of Pins | 7Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
Other details
| Brand | INFINEON |
| Part Number | FF200R12KT4HOSA1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 11460.36 |
| 3-5 | ₹ 11343.41 |
| 5-10 | ₹ 11109.53 |
| 10+ | ₹ 10875.64 |
Bulk discount will be automatically applied during checkout based on quantity.