Product details
| Channel Type:
P Channel
|
| Drain Source Voltage Vds:
12V
|
| Continuous Drain Current Id:
3A
|
| Drain Source On State Resistance:
0.04ohm
|
| Transistor Case Style:
SOT-23
|
| Transistor Mounting:
Surface Mount
|
| Rds(on) Test Voltage:
4.5V
|
| Gate Source Threshold Voltage Max:
900mV
|
| Power Dissipation:
750mW
|
| No. of Pins:
3Pins
|
| Operating Temperature Max:
150°C
|
| Product Range:
TrenchFET Series
|
| Qualification:
-
|
Other details
| Brand |
VISHAY |
| Part Number |
SI2315BDS-T1-GE3 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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