STMICROELECTRONICS STB140NF75T4 Power MOSFET, N Channel, 75 V, 120 A, 0.0075 ohm, TO-263 (D2PAK), Surface Mount

STB140NF75T4 is a N-channel STripFET� III power MOSFET. This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size�" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Typically suitable for switching application.

• 75V minimum drain-source breakdown voltage (ID = 250µA, VGS =0, TCASE=25°C)
• 2 to 4V gate threshold voltage range ( VDS = VGS, ID = 250µA)
• 0.0065ohm typical static drain-source on resistance (VGS = 10V, ID = 70A)
• 160S typical forward transconductance (VDS = 15V, ID = 70A)
• <lt/>0.0075ohm RDS(on)
• 30ns typical turn-on delay time (VDD = 38V, ID = 70A, RG = 4.7ohm, VGS = 10V)
• 120A maximum source-drain current
• 115ns typical reverse recovery time (ISD = 120A, di/dt = 100A/µs, VDD = 35V, Tj = 150°C)
• 450nC typical reverse recovery charge (ISD = 120A, di/dt = 100A/µs, VDD = 35V, Tj = 150°C)
• D²PAK package, maximum operating junction temperature range from -55 to 175°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.